KMB2D0N60SA_15 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
FEATURES
hV_DSS=60V, I_D=2A
hDrain-Source ON Resistance
R_DS(ON)=160mʃ(Max.) @ V_GS=10V
R_DS(ON)=220mʃ(Max.) @ V_GS=4.5V
hSuper High Dense Cell Design
KMB2D0N60SA
N-Ch Trench MOSFET
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@Ta=25
DC@Ta=70
V_DSS
60
V
V_GSS
‚20
V
2.0
I_D
1.6
A
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
Ta=25
Ta=70
I_DP
10
I_S
1.0
A
1.25
P_D
W
0.8
Maximum Junction Temperature
Storage Temperature Range
T_j
150

T_stg
-55q150 
Thermal Resistance, Junction to Ambient
R_thJA
Note>*Surface Mounted on 1 ƒ 1 FR4 Board, t†5sec
100 /W
PIN CONNECTION (TOP VIEW)
D
3
3
2
G
2008. 2. 25
1
2
1
S
Revision No : 1
SOT-23
KND
1/5