KMB2D0N60SA_08 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
FEATURES
V_DSS=60V, I_D=2A
Drain-Source ON Resistance
R_DS(ON)=160m (Max.) @ V_GS=10V
R_DS(ON)=220m (Max.) @ V_GS=4.5V
Super High Dense Cell Design
KMB2D0N60SA
N-Ch Trench MOSFET
E
L BL
2
3
1
P
P
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
60
V
20
V
Drain Current
DC@Ta=25
DC@Ta=70
2.0
I_D
1.6
A
Pulsed
Drain-Source-Diode Forward Current
I_DP
10
I_S
1.0
A
Drain Power Dissipation
Ta=25
Ta=70
1.25
P_D
W
0.8
Maximum Junction Temperature
Storage Temperature Range
T_j
150
T_stg
-55 150
Thermal Resistance, Junction to Ambient
R_thJA
100
/W
Note>*Surface Mounted on 1” 1” FR4 Board, t 5sec
PIN CONNECTION (TOP VIEW)
D
3
3
2
G
2008. 2. 25
1
2
1
S
Revision No : 1
SOT-23
KND
1/5