KMB060N60PA_08 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KMB060N60PA/FA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KMB060N60PA
It s mainly suitable for low viltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
FEATURES
V_DSS= 60V, I_D= 60A
Drain-Source ON Resistance :
R_DS(ON)=14m (Max.) @V_GS = 10V
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
RATING
UNIT
KMB060N60PA KMB060N60FA
V_DSS
60
V
Gate-Source Voltage
V_GSS
25
V
DC
I_D*
Drain Current
Pulsed (Note 1)
I_DP
60
60*
A
240
240*
A
Drain-Source Diode Forward Current
I_S
60
A
Drain Power Dissipation
P_D* ₂₅
150
51
W
Maximum Junction Temperature
T_j
-55 175
Storage Temperature Range
T_stg
-55 175
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%
*Drain Current Iimited by maximum junction temperature
Thermal Characteristics
CHARACTERISTIC
SYMBOL
RATING
UNIT
KMB060N60PA KMB060N60FA
Thermal Resistance, Junction-to-Ambient R_thJA
62.5
/W
Thermal Resistance, Junction-to-Case
R_thJC
1.0
2.9
/W
Equivalent Circuit
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KMB060N60FA
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
D
TO-220IS (1)
G
S
2008. 1. 4
Revision No : 4
1/7