KMB060N40BA Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KMB060N40BA
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and power
Supply.
FEATURES
V_DSS=40V, I_D=60A.
Low Drain to Source ON Resistance.
: R_DS(ON)=8.5m (Max.) @ V_GS=10V
: R_DS(ON)=11m (Max.) @ V_GS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
A
F
J
G
C
B
D
E
H
N
O
M
K
L
DIM MILLIMETERS
A 9.95 +_ 0.05
B
9.2+_ 0.1
C
8.00
P
D 15.3+_ 0.2
E
4.9 +_0.2
R
F
1.5
G 2.54 +_ 0.05
Q
H 0.80 +_ 0.05
J 1.27 +_0.10
K
4.50
L
1.30
M
6.90
N
1.75
O
4.40
P
0.1
+_
0.15
0.05
Q
2.4 +_ 0.1
R
2.0 MIN
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain to Source Voltage
Gate to Source Voltage
V_DSS
V_GSS
40
V
20
V
Drain Current
DC@T_C=25 (Note1)
I_D
Pulsed
(Note2) I_DP
60
A
100
Drain to Source Diode Forward Current
I_S
Single Pulsed Avalanche Energy
(Note3) E_AS
100
A
153
mJ
@T_C=25
Drain Power Dissipation
@Ta=25
(Note1)
P_D
(Note2)
69
W
3.1
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
Thermal Resistance, Junction to Case
(Note1) R_thJC
1.8
/W
Thermal Resistance, Junction to Ambient (Note2) R_thJA
40
/W
Note 1) R_thJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=42.5 H, I_AS=60A, V_DD=20V, V_GS=10V, Starting T_j=25
PIN CONNECTION (TOP VIEW)
D
2
2
Marking
D²PAK
KMB
060N40
BA
Type Name
Lot No
1
3
G
S
1
3
2009. 1. 14
Revision No : 0
1/4