KMB054N40IA Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KMB054N40IA
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
V_DSS=40V, I_D=54A.
Low Drain-Source ON Resistance.
: R_DS(ON)=8.5m (Max.) @ V_GS=10V
: R_DS(ON)=11m (Max.) @ V_GS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@T_C=25
Pulsed
Drain-Source-Diode Forward Current
@T_C=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
(Note1)
(Note2)
V_DSS
V_GSS
I_D
I_DP
I_S
P_D
40
V
20
V
54
A
100
100
A
45
W
3.1
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
Thermal Resistance, Junction to Case (Note1)
R_thJC
2.8
/W
Thermal Resistance, Junction to Ambient (Note2) R_thJA
40
/W
Note 1) R_thJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1” 1” Pad of 2 oz copper.
PIN CONNECTION (TOP VIEW)
D
2
2
A
C
M
N
G
FF
123
H
J
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_ 0.2
P
C
D
5.34 +_0.3
0.7 +_ 0.2
E
9.3 +_0.3
F
2.3+_ 0.2
G
0.76 +_ 0.1
H
2.3 +_ 0.1
L
J
0.5+_ 0.1
K
1.8 +_ 0.2
L
0.5 +_ 0.1
M
1.0 +_ 0.1
N
0.96 MAX
P
1.02 +_ 0.3
IPAK(1)
Marking
Type Name
KMB
054N40
IA
Lot No
1
3
1
3
G
S
2009. 7. 30
Revision No : 0
1/5