KMB054N40DC Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
KMB054N40DC
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
V_DSS=40V, I_D=54A.
Low Drain-Source ON Resistance.
: R_DS(ON)=8.5m (Max.) @ V_GS=10V
: R_DS(ON)=11m (Max.) @ V_GS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J
1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
1
2
3
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
V_DSS
Gate-Source Voltage
V_GSS
Drain Current
DC@T_C=25 (Note1)
I_D
Pulsed
(Note2) I_DP
Drain-Source-Diode Forward Current
I_S
@T_C=25
Drain Power Dissipation
@Ta=25
(Note1)
P_D
(Note2)
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Resistance, Junction to Case (Note1)
R_thJC
Thermal Resistance, Junction to Ambient (Note2) R_thJA
Note 1) R_thJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1” 1” Pad of 2 oz copper.
40
V
20
V
54
A
100
100
A
45
W
3.1
150
-55 150
2.8
/W
40
/W
PIN CONNECTION (TOP VIEW)
D
2
2
DPAK (1)
Marking
Type Name
KMB
054N40
DC
Lot No
1
3
G
S
1
3
2009. 10. 26
Revision No : 0
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