KMB035N40DC Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and power
Supply.
FEATURES
hV_DSS=40V, I_D=35A.
hLow Drain to Source On-state Resistance.
: R_DS(ON)=17.5mʃ(Max.) @ V_GS=10V
: R_DS(ON)=27.0mʃ(Max.) @ V_GS=4.5V
KMB035N40DC
N-Ch Trench MOSFET
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
1
2
3
O
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain to Source Voltage
V_DSS
Gate to Source Voltage
V_GSS
Drain Current
DC@T_C=25 (Note1)
I_D
Pulsed
(Note2) I_DP
@T_C=25 (Note1)
Drain Power Dissipation
P_D
@Ta=25 (Note2)
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Resistance, Junction to Case (Note1)
R_thJC
Thermal Resistance, Junction to Ambient (Note2) R_thJA
Note 1) R_thJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 ƒ1 Pad of 2 oz copper.
40
V
‚20
V
35
A
140
42
W
3.1
150

-55q150 
3.0 /W
40
/W
Marking
DPAK (1)
Type Name
KMB
035N40
DC
Lot No
PIN CONNECTION (TOP VIEW)
D
2
2
1
3
G
S
1
3
2010. 4. 9
Revision No : 0
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