KMB014P30QA Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for portable for portable equipment and SMPS.
FEATURES
V_DSS=-30V, I_D=-14A.
Drain-Source ON Resistance.
R_DS(ON)=10m (Max.) @ V_GS=-10V
R_DS(ON)=18m (Max.) @ V_GS=-4.5V
Super High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
V_DSS
-30
V
V_GSS
25
V
DC
I_D*
-14
A
Pulsed
I_DP
-70
A
Drain Source Diode Forward Current
I_S
-1.7
A
Drain Power Dissipation
P_D*
2.5
W
Maximum Junction Temperature
Storage Temperature Range
T_j
150
T_stg
-55~150
Thermal Resistance, Junction to Ambient R_thJA*
50
/W
Note : *Surface Mounted on FR4 Board
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S₂
7_D
2
7
3
6
S₃
6_D
G₄
4
5D
5
KMB014P30QA
P-Ch Trench MOSFET
H
T
DP
G
L
A
DIM MILLIMETERS
A
4.85 +_ 0.2
B1
3.94 +_ 0.2
8
5
B2
6.02+_ 0.3
D
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
KMB014P
30QA
706
2007. 6. 29
Revision No : 1
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