KMB010P30QA_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for Battery pack.
FEATURES
hV_DSS=-30V, I_D=-10A.
hDrain-Source ON Resistance.
R_DS(ON)=20mʃ(Max.) @ V_GS=-10V
R_DS(ON)=28mʃ(Max.) @ V_GS=-4.5V
hSuper High Dense Cell Design
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain Source Voltage
Gate Source Voltage
Drain Current
V_DSS
-30
V
V_GSS
‚20
V
DC
I_D*
-10
A
Pulsed
I_DP
-80
A
Drain Source Diode Forward Current
I_S
-1.7
A
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
P_D*
2.0
W
T_j
150

T_stg
-55~150 
Thermal Resistance, Junction to Ambient
Note : *Surface Mounted on FR4 Board
R_thJA*
62.5 /W
PIN CONNECTION (TOP VIEW)
S1
8_D
1
8
S₂
7_D
2
7
3
6
S₃
6_D
G₄
4
5D
5
KMB010P30QA
P-Ch Trench MOSFET
H
T
DP
G
L
U
A
DIM MILLIMETERS
A
4.85+_ 0.2
8
5
B1
3.94+_ 0.2
B2
6.02+_ 0.3
B1 B2
D
0.4+_ 0.1
G
0.15+0.1/-0.05
1
4
H
1.63+_ 0.2
L
0.65+_ 0.2
P
1.27
T
0.20+0.1/-0.05
U
0.1 MAX
FLP-8
KMB010P
30QA
709
2012. 6. 7
Revision No : 2
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