KMA7D0NP30Q Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – N and P-CH Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC converter applications.
It s mainly suitable for power management in notebook,
portable equipment and battery powered systems.
FEATURES
N-Channel
: V_DSS=30V, I_D=7A.
: R_DS(ON)=17m (Typ.) @ V_GS=10V.
: R_DS(ON)=22m (Typ.) @ V_GS=4.5V.
P-Channel
: V_DSS=-30V, I_D=-5.5A.
: R_DS(ON)=35m (Typ.) @ V_GS=-10V.
: R_DS(ON)=51m (Typ.) @ V_GS=-4.5V.
Super high dense cell design for extermely low R_DS(ON).
Reliable and rugged.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Curren
DC
Pulsed
V_DSS
V_GSS
I_D *
I_DP
Ta=25
Drain Power Dissipation
P_D *
Ta=100
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Resistance, Junction to Case R_thJA *
* : Surface Mounted on FR4 Board, t 10sec.
N-Ch
P-Ch
30
-30
20
20
7
-5.5
28
-20
2
0.8
150
-55 150
62.5
UNIT
V
V
A
W
/W
KMA7D0NP30Q
N and P-CH Trench MOSFET
A
8
5
B1 _B2 ^T
L
1
4
DP
H
G
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
4.9 +_ 0.1
3.9 +_ 0.1
6.0+_ 0.2
0.4+_ 0.1
0.15+0.1/-0.05
1.5+_ 0.2
0.75+_ 0.2
1.27
0.5 MAX
FLP-8
PIN CONNECTION (TOP VIEW)
S1
1
G1 2
S2
3
G2 ₄
8
D1
7
D1
6
D2
5
D2
D1 D1
S2
G2
G1
S1
N-Channel MOSFET
D2 D2
P-Channel MOSFET
2005. 10. 25
Revision No : 3
1/8