KMA4D5P20X Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – P-CH Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It’s mainly suitable for battery pack or power management in cell phone,
and PDA.
FEATURES
V_DSS=-20V, I_D=-4.5A.
Drain-Source ON Resistance.
: R_DS(ON)=60m (Max.) @ V_GS=-4.5V,.I_D=-4.5A
: R_DS(ON)=110m (Max.) @ V_GS=-2.5V,.I_D=-3.3A
Super High Dense Cell Design for Extremely Low R_DS(ON)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Source Current
DC
Pulsed
V_DSS
V_GSS
I_D *
I_DP*
I_S
-20
12
4.5
16
-1.3
Drain Power Dissipation
Ta=25
Ta=70
2.0
P_D *
1.3
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
T_j
T_stg
R_thJA *
150
-55 150
62.5
* : Surface Mounted on 1 1 FR4 Board, t 5sec.
UNIT
V
V
A
A
W
/W
KMA4D5P20X
P-CH Trench MOSFET
A
F
6
4
C
B1 B
E
1
3
DIM MILLIMETERS
A
2.926 +_ 0.05
G
B
2.80 +_ 0.15
B1
1.626 +_ 0.05
C
0.15+_ 0.05
D
1.25 MAX
D1
1.10 +_ 0.05
D1 D
D2
0~0.10
E
0.45 +_ 0.08
D2
F
0.95 +_ 0.05
G
0.40+_ 0.05
TSOP-6
Marking
MPA
Type Name
Lot No.
PIN CONNECTION (TOP VIEW)
D
1
D
2
G
3
6
D
5
D
4S
D DDD
G
S
2006. 8. 22
Revision No : 1
1/5