KMA3D7P20SA_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for use as a load switch.
FEATURES
hV_DSS=-20V, I_D=-3.7A
hDrain to Source on-state Resistance
R_DS(ON)=76mʃ(Max.) @ V_GS=-4.5V
R_DS(ON)=112mʃ(Max.) @ V_GS=-2.5V
KMA3D7P20SA
P-Ch Trench MOSFET
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
Max 0.1.
M
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL P-Ch UNIT
Drain to Source Voltage
V_DSS
-20
V
Gate to Source Voltage
V_GSS
‚12
V
Drain Current
DC@Ta=25 (Note1)
I_D
Pulsed
(Note1)
I_DP
-3.7
A
-16
Drain to Source Diode Forward Current
I_S
Drain
Power Dissipation
Ta=25
Ta=100
(Note1)
P_D
(Note1)
-16
A
1.25
W
0.6
Maximum Junction Temperature
Storage Temperature Range
T_j
150

T_stg
-55q150 
Thermal Resistance, Junction to Ambient (Note1) R_thJA
Note1) Surface Mounted on 1uƒ1uFR4 Board, t†5sec.
100
/W
PIN CONNECTION (TOP VIEW)
D
3
3
SOT-23
KNH
2
1
G
S
2
1
2009. 6. 10
Revision No : 1
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