KMA3D7P20SA Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It’s mainly suitable for use as a load switch.
FEATURES
V_DSS=-20V, I_D=-3.7A
Drain to Source on-state Resistance
R_DS(ON)=76m (Max.) @ V_GS=-4.5V
R_DS(ON)=112m (Max.) @ V_GS=-2.5V
KMA3D7P20SA
P-Ch Trench MOSFET
E
L BL
2
3
1
P
P
M
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL P-Ch UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@Ta=25
Pulsed
(Note1)
(Note1)
Drain to Source Diode Forward Current
V_DSS
V_GSS
I_D
I_DP
I_S
-20
V
12
V
-3.7
A
-16
-16
A
Drain
Power Dissipation
Ta=25
Ta=100
(Note1)
P_D
(Note1)
1.25
W
0.6
Maximum Junction Temperature
Storage Temperature Range
T_j
150
T_stg
-55 150
Thermal Resistance, Junction to Ambient (Note1) R_thJA
100
/W
Note1) Surface Mounted on 1 1 FR4 Board, t 5sec.
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
G
S
2
1
SOT-23
KNH
2009. 6. 10
Revision No : 1
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