KMA3D6N20SA_12 Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
FEATURES
hV_DSS=20V, I_D=3.6A
hDrain-Source ON Resistance
R_DS(ON)=45mʃ(Max.) @ V_GS=4.5V
R_DS(ON)=65mʃ(Max.) @ V_GS=2.5V
hSuper Hige Dense Cell Design
KMA3D6N20SA
N-Ch Trench MOSFET
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
T_A=25
T_A=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : Surface Mounted on FR4 Board, t†10sec.
SYMBOL N-Ch UNIT
V_DSS
20
V
V_GSS
‚12
V
I_D
3.6
A
I_DP
14
I_S
1.25
A
1.25
P_D
W
0.8
T_j
150

T_stg
-55q150 
R_thJA
100 /W
PIN CONNECTION (TOP VIEW)
D
3
3
SOT-23
KNC
2
1
G
S
2
1
2012. 8. 22
Revision No : 2
1/5