KMA3D0N20SA_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
FEATURES
hV_DSS=20V, I_D=3A
hDrain to Source on-state Resistance
R_DS(ON)=55mʃ(Max.) @ V_GS=4.5V
R_DS(ON)=110mʃ(Max.) @ V_GS=2.5V
hSuper Hige Dense Cell Design
KMA3D0N20SA
N-Ch Trench MOSFET
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@T_a=25 (Note1)
Pulsed
(Note1)
T_a=25
Drain Power Dissipation
T_a=70
Maximum Junction Temperature
(Note1)
(Note1)
Storage Temperature Range
V_DSS
V_GSS
I_D
I_DP
P_D
T_j
T_stg
20
V
‚12
V
3
A
12
1.25
W
0.8
150

-55q150 
Thermal Resistance, Junction to Ambient (Note1) R_thJA
Note1) Surface Mounted on 1uƒ1uFR4 Board, t†5sec.
100 /W
PIN CONNECTION (TOP VIEW)
D
3
3
2
G
2009. 8. 17
1
2
1
S
Revision No : 2
SOT-23
KNB
1/4