KMA2D4P20SA_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for use as a load switch in battery powered applications.
KMA2D4P20SA
P-Ch Trench MOSFET
FEATURES
hV_DSS=-20V, I_D=-2.4A.
hDrain to Source on-state Resistance.
: R_DS(ON)=100mʃ(Max.) @ V_GS=-4.5V.
: R_DS(ON)=175mʃ(Max.) @ V_GS=-2.5V.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
V_DSS
-20
V
Gate to Source Voltage
V_GSS
‚12
V
Drain Current
DC@Ta=25(Note1)
I_D
-2.4
A
Pulsed
(Note1)
I_DP
-9
Ta=25 (Note1)
Drain Power Dissipation
Ta=100 (Note1)
1.25
P_D
W
0.6
Maximum Junction Temperature
Storage Temperature Range
T_j
150

T_{stg -55q150 }
Thermal Resistance, Junction to Ambient (Note1) R_thJA
Note1)Surface Mounted on 1uƒ1uFR4 Board, t†5sec.
100 /W
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
SOT-23
Marking
KB2 ^{Type Name}
Lot No.
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
G
S
2
1
2011. 12. 22
Revision No : 3
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