KMA2D4P20S Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It’s mainly suitable for use as a load switch in battery powered applications.
FEATURES
V_DSS=-20V, I_D=-2.4A.
Drain-Source ON Resistance.
: R_DS(ON)=100m (Max.) @ V_GS=-4.5V.
: R_DS(ON)=175m (Max.) @ V_GS=-2.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
V_DSS
-20
Gate-Source Voltage
V_GSS
12
Drain Current
DC
I_D *
-2.4
Pulsed (Note1) I_DP*
-9
Source-Drain Diode Current
I_S *
-0.9
Ta=25
Drain Power Dissipation
Ta=100
1.0
P_D *
0.6
Maximum Junction Temperature
Storage Temperature Range
T_j
150
T_stg
-55 150
Thermal Resistance, Junction to Ambient R_thJA *
125
UNIT
V
V
A
A
W
/W
* : Surface Mounted on 1 1 FR4 Board, t 5sec.
KMA2D4P20S
P-Ch Trench MOSFET
E
B
2
3
1
M
DIM
A
B
C
D
E
G
H
J
K
M
N
MILLIMETERS
2.926 +_ 0.05
1.626 +_ 0.05
1.25 MAX
0.40 +_ 0.05
2.80 +_ 0.15
1.90 +_ 0.10
0.95+_ 0.05
0.15+_ 0.05
0.00 ~ 0.10
0.45+_ 0.08
1.10+_ 0.05
SOT-23
PIN CONNECTION
Top View
D
3
2
1
G
S
2006. 4. 6
Revision No : 0
1/5