KMA2D3P20S Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for use as a load switch in battery powered applications.
FEATURES
V_DSS=-20V, I_D=-2.3A.
Drain-Source ON Resistance.
: R_DS(ON)=130m (Max.) @ V_GS=-4.5V.
: R_DS(ON)=190m (Max.) @ V_GS=-2.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
V_DSS
-20
V
Gate-Source Voltage
V_GSS
10
V
Drain Current
DC
I_D *
-2.3
A
Pulsed (Note1) I_DP*
-8
Source-Drain Diode Current
I_S *
-1.25
A
Drain Power Dissipation Ta=25
P_D *
1.25
W
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_{stg -55 150}
Thermal Resistance, Junction to Ambient
R_thJA *
100
/W
* : Surface Mounted on 1 1 FR4 Board
KMA2D3P20S
P-Ch Trench MOSFET
E
B
2
3
1
M
DIM
A
B
C
D
E
G
H
J
K
M
N
MILLIMETERS
2.93+_ 0.1
1.63+_ 0.1
1.25 MAX
0.40+0.1/-0.05
2.80+_ 0.15
1.9+_ 0.1
0.95+_ 0.1
0.15+0.1/-0.05
0.00 ~ 0.15
0.45+_ 0.08
1.10+_ 0.1
SOT-23W
SH1
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
G
S
2
1
2007. 5. 30
Revision No : 2
1/5