KMA010P20Q Datasheet, PDF (1/5 Pages) KEC(Korea Electronics) – P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for battery pack or power management
in cell phone, and PDA.
FEATURES
V_DSS=-20V, I_D=-10A.
Drain-Source ON Resistance.
: R_DS(ON)=14m (Max.) @ V_GS=-4.5V, I_D=-10A.
: R_DS(ON)=24m (Max.) @ V_GS=-2.5V, I_D=-7.6A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
V_DSS
-20
V
Gate-Source Voltage
V_GSS
12
V
Drain Current
DC
I_D *
Pulsed (Note1) I_DP*
10
A
48
Source-Drain Diode Current
I_S *
-2.3
A
Ta=25
Drain Power Dissipation
Ta=100
1.6
P_D *
W
0.625
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
Thermal Resistance, Junction to Ambient R_thJA *
80
/W
* : Surface Mounted on 1 1 FR4 Board, t 5sec.
KMA010P20Q
P-Ch Trench MOSFET
H
T
DP
G
L
A
8
5
DIM
A
B1
B2
D
MILLIMETERS
4.85 +_ 0.2
3.94 +_ 0.2
6.02+_ 0.3
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H
1.63 +_ 0.2
1
4
L
0.65 +_ 0.2
P
1.27
T 0.20+0.1/-0.05
FLP-8
2007. 3. 22
Revision No : 1
1/5