KID65081AP_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – BIPOLAR LINEAR INTEGRATED CIRCUIT

SEMICONDUCTOR
TECHNICAL DATA
8 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON
TRANSISTOR ARRAYS
The KID6508* series are high-voltage, high-current darlington
drivers comprised of eight NPN darlington pairs.
All units feature integral clamp diodes for switching inductive loads.
Applications include relay, hammer, lamp and display(LED) drivers.
FEATURES
Output Current (Single Output) : 500mA Max.
High Sustaining Voltage Outputs : 50V Min.
Output Clamp Diodes
Inputs Compatible With Various Types of Logic.
PKG Type, AP : DIP-18Pin, DIP-18(1)Pin
PKG Type, AF : FLP-20Pin
TYPE
KID65081AP/AF
KID65082AP/AF
KID65083AP/AF
KID65084AP/AF
INPUT BASE RESISTOR
External
10.5k +7V Zenner diode
2.7k
10.5k
DESIGNATION
General Purpose
14 25V P-MOS
TTL, 5V C-MOS
6 15V P-MOS, C-MOS
MAXIMUM RATINGS (Ta=25 , unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING
Output Sustaining Voltage
Output Current
Input Voltage
Input Current
Reverse Voltage
Clamp Diode
Forward Current
V_CE(SUS)
I_OUT
V_IN (*1)
I_IN (**2)
V_R
I_F
-0.5 50
500
-0.5 +30
25
50
500
AP
1.47
Power Dissipation
P_D
AF
0.96
Operating Temperature
T_opr
-40 85
Storage Temperature
T_stg
-55 150
*1 Except KID65081AP/AF, **2Only KID65081AP/AF
UNIT
V
mA/ch
V
mA
V
mA
W
W
KID65081AP/AF~
KID65084AP/AF
BIPOLAR LINEAR INTEGRATED CIRCUIT
W
d
D
P
T
Q
DIM MILLIMETERS
A
A
25.1MAX
B
6.40+_ 0.2
18
10
C
3.50+_ 0.2
D
1.40 +_0.1
d
0.50+_ 0.1
G
4.15+_ 0.3
1
9
L
3.30+_ 0.3
P
2.54
T 0.25+0.1/-0.05
W
7.62
Q
0 - 15
DIP-18
W
d
D
P
T
Q
DIM MILLIMETERS
A
A
23.0+_ 0.2
18
10
B
6.35+_ 0.2
C
3.30+_ 0.2
D
1.52 +_0.1
d
0.46+_ 0.1
G
4.05+_ 0.3
1
9
L
3.30+_ 0.3
P
2.54
T 0.25+0.1/-0.05
W
7.75+_ 0.2
Q
0 - 10
DIP-18(1)
D
P
A
20
11
1
10
L
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
12.83+_ 0.2
7.49+_ 0.2
10.34+_ 0.3
0.4 +_ 0.1
0.20+0.1/-0.05
2.51+_ 0.2
0.65+_ 0.2
1.27
0.27+0.1/-0.05
FLP-20
2009. 12. 16
Revision No : 2
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