KID65001AP-AF Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – SEMICONDUCTOR

SEMICONDUCTOR
TECHNICAL DATA
7 CIRCUIT DARLINGTON TRANSISTOR ARRAY
KID65001AP/AF~
KID65004AP/AF
BIPOLAR LINEAR INTEGRATED CIRCUIT
FEATURES
hOutput Current : 500mA Max.
hHigh Sustaining Voltage Outputs : 50V Min.
hOutput Clamp Diodes.
hInputs Compatible With Various Types of Logic.
hPKG Type AP : DIP-16Pin AF : FLP-16Pin
TYPE
KID65001AP/AF
KID65002AP/AF
KID65003AP/AF
KID65004AP/AF
INPUT RESISTOR
No (External)
Zener Diode
7V+10.5kʃ
2.7kʃ
10.5kʃ
DESIGNATION
General Purpose
14q25V P-MOS
TTL, 5V C-MOS
6q15V P-MOS, C-MOS
W
d
D
P
A
16
9
1
8
T
Θ
DIM MILLIMETERS
A
19.3+_ 0.2
B
6.45+_ 0.2
D
1.52+_ 0.1
d
0.46+_ 0.1
G
0.50 MIN
H
3.8+_ 0.3
L
3.3+_ 0.3
P
2.54
T 0.25+0.1/-0.05
W
7.62
Θ
0 - 15
DIP-16
DESCRIPTION:
The KID65001AP/AF Series are high-voltage, high-current
darlington transistor array comprised of seven NPN darlington pairs.
All units feature internal clamp diodes for switching inductive loads.
MAXIMUM RATINGS (Ta=25, unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING
UNIT
Output Sustaining Voltage
Output Current
Input Voltage
Input Current
Clamp
Diode
Reverse Voltage
Forward Current
GND Terminal Current
V_CE(SUS)
I_OUT
I_IN ¹⁾
I_IN ²⁾
V_R
I_F
I_GND
50
500
-0.5q+30
25
50
500
2.8
V
mA/ch
V
mA
V
mA
A
AP
Power Dissipation
AF
1.47
W
P_D
0.54 /0.63³⁾/1.25⁴⁾ W
Operating Temperature
T_opr
-40q85

Storage Temperature
T_stg
1) Except KID65001AP/AF
2) Only KID65001AP/AF
3) On PCB(30ƒ30ƒ1.6mm, Cu 50%)
4) On PCB (Test Board : JEDEC 2s2p)
-55q150

D
P
A
16
9
1
8
L
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
9.88+_ 0.2
3.94 +_0.2
6.00+_ 0.3
0.4+_ 0.1
0.15+0.1/-0.05
1.63+_ 0.2
0.65+_ 0.2
1.27
0.20+0.1/-0.05
FLP-16
2014. 9. 16
Revision No : 12
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