KIC7S66FU_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT

SEMICONDUCTOR
TECHNICAL DATA
BILATERAL SWITCH
The KIC7S66FU is a high speed C²MOS BILATERAL SWITCH
fabricated with silicon gate C²MOS technology.
It consists of a high speed switch capable of controlling either digital
or analog signals while maintaining the C²MOS low power dissipation.
Control input (C) is provided to control the switch.
The switch turns ON while the Cl input is high, and the switch turns
OFF while low.
Input is equipped with protection circuits against static discharge or
transient excess voltage.
FEATURES
High Speed : t_pd=7ns(Typ.) at V_CC=5V.
Low Power Dissipation : I_CC=1 A(Max.) at Ta=25 .
High Noise Immunity : V_NIH=V_NIL=28% V_CC(Min.).
Low ON Resistance : R_ON=100 (Typ.) at V_CC=9V.
Low T.H.D : THD=0.05%(Typ.) at V_CC=5V.
KIC7S66FU
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9 +_ 0.1
T
0.15+0.1/-0.05
T
G
USV
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
DC Supply Voltage
Control Input Voltage
Swith I/O Voltage
Control Diode Current
Output Diode Current
Through I/O Current
DC V_CC/Ground Current
Power Dissipation
Storage Temperature
Lead Temperature (10s)
SYMBOL
V_CC
V_IN
V_I/O
I_CK
I_OK
I_T
I_CC
P_D
T_stg
T_L
RATING
-0.5 10
-0.5 V_CC+0.5
-0.5 V_CC+0.5
20
20
12.5
25
200
-65 150
260
UNIT
V
V
V
mA
mA
mA
mA
mW
MARKING
SW ^{Type Name}
Lot No.
PIN CONNECTION (TOP VIEW)
IN/OUT 1
OUT/IN 2
GND 3
5 V_CC
4 CONT.
2008 .9. 17
Revision No : 3
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