KIC7S04FU_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT

SEMICONDUCTOR
TECHNICAL DATA
INVERTER
The KIC7S04FU is a high speed C²MOS INVERTER fabricated
with silicon gate C²MOS technology.
It achieves high speed operation similar to equivalent LSTTL while
maintaining the C²MOS low power dissipation.
The internal circuit is composed of 3 stages including buffer output,
which enables high noise immunity and stable output.
The inputs is equipped with protection circuits against static discharge
or transient excess voltage.
FEATURES
High Speed : t_pd=7ns(Typ.) at V_CC=5V.
Low Power Dissipation : I_CC=1 A(Max.) at Ta=25 .
High Noise Immunity : V_NIH=V_NIL=28% V_CC(Min.).
Output Drive Capability : 5 LSTTL Loads.
Symmetrical Output Impedance : | I_OH |=I_OL=2mA(Min.)
Balanced Propagation Delays : t_pLH t_pHL
Wide Operating Voltage Range : V_CC(opr)=2 6V.
KIC7S04FU
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9 +_ 0.1
T 0.15+0.1/-0.05
T
G
USV
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Supply Voltage Range
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current
DC V_CC/Ground Current
Power Dissipation
Storage Temperature
Lead Temperature (10s)
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
RATING
-0.5 7
-0.5 V_CC+0.5
-0.5 V_CC+0.5
20
20
12.5
25
200
-65 150
260
UNIT
V
V
V
mA
mA
mA
mA
mW
MARKING
SR ^{Type Name}
Lot No.
PIN CONNECTION(TOP VIEW)
NC 1
IN A 2
GND 3
5 V_CC
4 OUT Y
2008. 9. 17
Revision No : 2
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