KHB9D0N50P1_07 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
V_DSS(Min.)= 500V, I_D= 9A
Drain-Source ON Resistance :
R_DS(ON)=0.8 @V_GS =10V
Qg(typ.) =34.6nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB9D0N50F1 ^UNIT
KHB9D0N50P1
KHB9D0N50F2
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
500
V
30
V
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
9
9*
5.4
5.4*
36
36*
360
13.5
4.5
135
44
1.07
0.35
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
150
-55 150
Thermal Resistance, Junction-to-Case R_thJC
0.93
Thermal Resistance, Case-to-Sink
R_thCS
0.5
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
2.86
/W
-
/W
62.5
/W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB9D0N50P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB9D0N50P1
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KHB9D0N50F1
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB9D0N50F2
A
C
S
E
L
L
M
D
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_0.2
F
3.0 +_ 0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J
13.6 +_0.5
K
3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P
6.8 +_0.1
Q
4.5+_ 0.2
R
2.6+_ 0.2
S
0.5 Typ
TO-220IS
1/7