KHB5D0N50P Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
V_DSS= 500V, I_D= 5.0A
Drain-Source ON Resistance :
R_DS(ON)=1.5 @V_GS = 10V
Qg(typ.) = 21nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KHB5D0N50F ^UNIT
KHB5D0N50P
KHB5D0N50F2
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
500
30
5.0
5.0*
2.9
2.9*
20
20*
390
9.2
3.5
73
38
0.74
0.3
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
150
-55 150
Thermal Resistance, Junction-to-Case R_thJC
1.71
Thermal Resistance, Case-to-Sink
R_thCS
0.5
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
3.31
/W
-
/W
62.5
/W
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB5D0N50P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB5D0N50P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KHB5D0N50F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB5D0N50F2
A
C
S
E
L
L
M
D
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_0.2
F
3.0 +_ 0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J
13.6 +_0.5
K
3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P
6.8 +_0.1
Q
4.5+_ 0.2
R
2.6+_ 0.2
S
0.5 Typ
TO-220IS
1/7