KHB4D5N60P Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
V_DSS(Min.)= 600V, I_D= 4.5A
Drain-Source ON Resistance :
R_DS(ON)=2.5 @V_GS =10V
Qg(typ.) =17nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB4D5N60F ^UNIT
KHB4D5N60P
KHB4D5N60F2
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
T_j
T_stg
600
30
4.5
4.5*
2.8
2.8*
18
18*
260
10.6
4.5
106
36
0.85
0.29
150
-55 150
V
V
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case R_thJC
1.18
Thermal Resistance, Case-to-Sink
R_thCS
0.5
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
3.47
/W
-
/W
62.5
/W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB4D5N60P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB4D5N60P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KHB4D5N60F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB4D5N60F2
A
C
S
E
L
L
M
D
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_0.2
F
3.0 +_ 0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J
13.6 +_0.5
K
3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P
6.8 +_0.1
Q
4.5+_ 0.2
R
2.6+_ 0.2
S
0.5 Typ
TO-220IS
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