KHB3D0N70P Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KHB3D0N70P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies.
FEATURES
V_DSS= 700V, I_D= 3A
Drain-Source ON Resistance
: R_DS(ON)= 3.5 @V_GS = 10V
Qg(typ.) = 20.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB3D0N70P KHB3D0N70F
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T_C=25
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
700
30
3.0
3.0*
12
12*
345
8.0
4.0
137
50
1.04
0.34
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
0.91
2.5
/W
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
KHB3D0N70P
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
N 123
F
B
G
C
O
J
Q
H
1. GATE
2. DRAIN
3. SOURCE
KHB3D0N70F
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D
0.8 +_0.1
E 3.18 +_ 0.1
F
3.3 +_0.1
G 12.57 +_ 0.2
H
0.5 +_0.1
J 13.0 MAX
K _3.23 +_ _0.1
L 1.47 MAX
M 2.54 +_ 0.2
N
4.7 +_ 0.2
O 6.68 +_ 0.2
P
6.5
Q 2.76 +_ 0.2
TO-220IS
D
2007. 1. 4
Revision No : 1
G
S
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