KHB019N20P1_07 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC converters
and switching mode power supplies.
FEATURES
V_DSS=200V, I_D=19A
Drain-Source ON Resistance : R_DS(ON)=0.18
Qg(typ.)=35nC
@V_GS = 10V
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB019N20F1 ^UNIT
KHB019N20P1
KHB019N20F2
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@T_C=25
@T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
T_j
T_stg
200
30
19
19*
12.1
12.1*
76
76*
250
14
4.5
140
50
1.12
0.4
150
-55 150
V
V
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case R_thJC
0.89
Thermal Resistance, Case-to-Sink
R_thCS
0.5
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
2.5
/W
-
/W
62.5
/W
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB019N20P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB019N20P1
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KHB019N20F1
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB019N20F2
A
C
S
E
L
L
M
D
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_0.2
F
3.0 +_ 0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J
13.6 +_0.5
K
3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P
6.8 +_0.1
Q
4.5+_ 0.2
R
2.6+_ 0.2
S
0.5 Typ
TO-220IS
1/7