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KGT50N60KDA Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – High speed switching | |||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
hHigh speed switching
hHigh system efficiency
hShort Circuit Withstand Times â10us
hExtremely enhanced avalanche capability
KGT50N60KDA
A
B
O
S
K
D
E
F
P
P
1
2
3
DIM MILLIMETERS
A
15.90 +_ 0.30
B
5.00 +_ 0.20
C
20.85 +_ 0.30
D
3.00 +_ 0.20
E
2.00 +_ 0.20
F
1.20 +_ 0.20
MG
H
I
Max. 4.50
20.10 +_ 0.70
0.60 +_ 0.02
I
J
14.70 +_ 0.20
K
2.00 +_ 0.10
M
2.40 +_ 0.20
O
3.60 +_ 0.30
P
5.45 +_ 0.30
Q
3.60 +_ 0.20
R
7.19 +_ 0.10
S
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
VCES
600
V
VGES
Â20
V
Collector Current
@Tc=25Â
IC
@Tc=100Â
100
A
50
A
Pulsed Collector Current
ICM*
150
A
Diode Continuous Forward Current @Tc=100Â
IF
50
A
Diode Maximum Forward Current
IFM
100
A
@Tc=25Â
Maximum Power Dissipation
PD
@Tc=100Â
345
W
138
W
Maximum Junction Temperature
Tj
150
Â
Storage Temperature Range
Tstg -55 to + 150 Â
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
Rt h JC
Rt h JC
Rt h JA
MAX.
0.36
1.0
40
UNIT
Â/W
Â/W
Â/W
TO-247
C
G
E
E
C
G
2011. 5. 25
Revision No : 0
1/8
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