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KGT30N120NDH Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – High speed switching | |||
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SEMICONDUCTOR
TECHNICAL DATA
KGT30N120NDH
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
hHigh speed switching
hHigh system efficiency
hSoft current turn-off waveforms
hExtremely enhanced avalanche capability
A
N
O
D
E
d
PP
123
Q
B
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d
1.00 +_ 0.20
E 3.00 +_ 0.20
F
3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
Â20
V
Collector Current
@Tc=25Â
IC
@Tc=100Â
50
A
30
A
Pulsed Collector Current
ICM*
90
A
Diode Continuous Forward Current @Tc=100Â IF
30
A
Diode Maximum Forward Current
IFM
150
A
Maximum Power Dissipation
@Tc=25Â
PD
@Tc=100Â
310
W
125
W
Maximum Junction Temperature
Tj
150
Â
Storage Temperature Range
Tstg -55 to + 150 Â
*Repetitive rating : Pulse width limited by max. junction temperature
TO-3P(N)-E
C
G
E
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
Rt h JC
Rt h JC
Rt h JA
MAX.
0.4
2.8
40
UNIT
Â/W
Â/W
Â/W
E
C
G
2011. 1. 12
Revision No : 0
1/8
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