KGT30N120NDA Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – High speed switching

SEMICONDUCTOR
TECHNICAL DATA
KGT30N120NDA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
general inverters, etc.
FEATURES
hHigh speed switching
hHigh system efficiency
hSoft current turn-off waveforms
hExtremely enhanced avalanche capability
A
N
O
D
E
d
PP
123
Q
B
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d
1.00 +_ 0.20
E 3.00 +_ 0.20
F
3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
V_CES
1200
V
Gate-Emitter Voltage
V_GES
‚20
V
Collector Current
@Tc=25
I_C
@Tc=100
50
A
30
A
Pulsed Collector Current
I_CM*
90
A
Diode Continuous Forward Current @Tc=100 I_F
30
A
Diode Maximum Forward Current
I_FM
150
A
Maximum Power Dissipation
@Tc=25
P_D
@Tc=100
310
W
125
W
Maximum Junction Temperature
T_j
150

Storage Temperature Range
T_stg -55 to + 150 _
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R_{t h JC}
R_{t h JC}
R_{t h JA}
MAX.
0.4
2.8
40
UNIT
/W
/W
/W
TO-3P(N)-E
C
G
E
E
C
G
2011. 9. 6
Revision No : 0
1/8