KGT25N120NDA_15 Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – High speed switching

SEMICONDUCTOR
TECHNICAL DATA
KGT25N120NDA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
High speed switching
High system efficiency
Soft current turn-off waveforms
Extremely enhanced avalanche capability
A
N
O
D
E
d
PP
123
Q
B
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d
1.00 +_ 0.20
E 3.00 +_ 0.20
F
3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
V_CES
1200
V
Gate-Emitter Voltage
V_GES
20
V
Collector Current
@Tc=25
@Tc=100
50
A
I_C
25
A
Pulsed Collector Current
I_CM*
90
A
Diode Continuous Forward Current @Tc=100
I_F
25
A
Diode Maximum Forward Current
I_FM
150
A
Maximum Power Dissipation
@Tc=25
@Tc=100
310
W
P_D
125
W
Maximum Junction Temperature
T_j
150
Storage Temperature Range
T_stg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R _JC
R _JC
R _JA
MAX.
0.4
2.8
40
UNIT
/W
/W
/W
TO-3P(N)-E
C
G
E
E
C
G
2009. 10. 29
Revision No : 0
1/8