KGT15N60FDA Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – SEMICONDUCTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness as well as short circuit ruggedness.
It is designed for hard switching applications.
FEATURES
hHigh speed switching
hHigh system efficiency
hShort Circuit Withstand Times ℜ5us(@T_C=100)
hExtremely enhanced avalanche capability
KGT15N60FDA
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
V_CES
600
V
Gate-Emitter Voltage
V_GES
‚20
V
Collector Current
@Tc=25
I_C
@Tc=100
30 ⁽¹⁾
A
15 ⁽¹⁾
A
Pulsed Collector Current
I ⁽²⁾
CM
60 ⁽¹⁾
A
Diode Continuous Forward Current @Tc=25
I_F
30 ⁽¹⁾
A
Diode Maximum Forward Current
I ⁽²⁾
FM
60 ⁽¹⁾
A
@Tc=25
Maximum Power Dissipation
P_D
@Tc=100
41.6
W
17
W
*RMeapxeitmitiuvme rJautinncgti:oPnuTlseemwpeidrathtulriemited by max. junction temTp_jerature 150

Storage Temperature Range
T_stg
(1) : Limited by maximum junction temperature.
(2) : Pulse width limited by maximum junction temperature.
-55 to + 150 
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R_{t h JC}
R_{t h JCD}
R_{t h JA}
MAX.
3.0
3.6
62.5
UNIT
/W
/W
/W
2015. 9. 04
Revision No : 2
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