KGT15N120NDA Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR
TECHNICAL DATA
KGT15N120NDA
General Description
KEC NPT IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness for soft switching application such as
IH(induction heating), microwave oven, etc.
FEATURES
High speed switching
High system efficiency
Soft current turn-off waveforms
Extremely enhanced avalanche capability
A
N
O
D
E
d
PP
123
Q
B
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F
3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
V_CES
1200
V
V_GES
20
V
Collector Current
Pulsed Collector Current
@T_C=25
@T_C=100
Diode Continuous Forward Current @T_C=100
Diode Maximum Forward Current
30
A
I_C
15
A
I_CM*
45
A
I_F
15
A
I_FM
45
A
Maximum Power Dissipation
Maximum Junction Temperature
@T_C=25
@T_C=100
200
W
P_D
80
W
T_j
150
Storage Temperature Range
T_stg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R _JC
R _JC
R _JA
MAX.
0.6
2.8
40
UNIT
/W
/W
/W
TO-3P(N)-E
C
G
E
E
C
G
2009. 11. 11
Revision No : 0
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