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KGF75N60KDB Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – High speed switching | |||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
hHigh speed switching
hHigh ruggedness, temperature stable behavior
hShort Circuit Withstand Times â10us
hExtremely enhanced avalanche capability
KGF75N60KDB
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
VCES
600
V
VGES
Â20
V
@Tc=25Â
IC
@Tc=100Â
100
A
75
A
Pulsed Collector Current
ICM*
225
A
Diode Continuous Forward Current @Tc=100Â
IF
75
A
Diode Maximum Forward Current
IFM
150
A
@Tc=25Â
Maximum Power Dissipation
PD
@Tc=100Â
357
W
143
W
Maximum Junction Temperature
Tj
150
Â
Storage Temperature Range
Tstg -55 to + 150 Â
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
Rt h JC
Rt h JC
Rt h JA
MAX.
0.35
0.85
40
UNIT
Â/W
Â/W
Â/W
E
C
G
2015. 4. 23
Revision No : 1
1/8
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