KGF40N65KDC Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – SEMICONDUCTOR

SEMICONDUCTOR
TECHNICAL DATA
KGF40N65KDC
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
hHigh speed switching
hHigh ruggedness, temperature stable behavior
hShort Circuit Withstand Times ℜ10us
hExtremely enhanced avalanche capability
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
V_CES
650
V
V_GES
‚20
V
@Tc=25
I_C
@Tc=100
80
A
40
A
Pulsed Collector Current
I_CM*
120
A
Diode Continuous Forward Current @Tc=100
I_F
40
A
Diode Maximum Forward Current
I_FM
80
A
@Tc=25
Maximum Power Dissipation
P_D
@Tc=100
208
W
104
W
Maximum Junction Temperature
T_j
175

Storage Temperature Range
T_stg -55 to + 150 _
*Repetitive rating : Pulse width limited by max. junction temperature
A
B
O
S
K
D
E
F
PP
123
DIM MILLIMETERS
A
15.90 +_ 0.30
B
5.00 +_ 0.20
C
20.85 +_ 0.30
D
3.00 +_ 0.20
E
2.00 +_ 0.20
F
1.20 +_ 0.20
MG
H
I
Max. 4.50
20.10 +_ 0.70
0.60 +_ 0.02
I
J
14.70 +_ 0.20
K
2.00 +_ 0.10
M
2.40 +_ 0.20
O
3.60 +_ 0.30
P
5.45 +_ 0.30
Q
3.60 +_ 0.20
R
7.19 +_ 0.10
S
TO-247
C
G
E
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R_{t h JC}
R_{t h JC}
R_{t h JA}
MAX.
0.72
1.55
40
UNIT
/W
/W
/W
E
C
G
2016. 03. 07
Revision No : 1
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