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KGF30N135NDH Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – High speed switching
SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy
efficiency and high avalanche ruggedness for soft switching applications
such as IH(induction heating), microwave oven& etc.
FEATURES
hHigh speed switching
hHigh ruggedness, temperature stable behavior
hSoft current turn-off waveforms
hExtremely enhanced avalanche capability
KGF30N135NDH
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
VCES
1350
V
VGES
‚20
V
@Tc=25
IC
@Tc=100
60
A
30
A
Pulsed Collector Current
ICM*
90
A
Diode Continuous Forward Current @Tc=100
IF
30
A
Diode Maximum Forward Current
IFM
90
A
Maximum Power Dissipation
@Tc=25
PD
@Tc=100
278
W
111
W
Maximum Junction Temperature
Tj
150

Storage Temperature Range
Tstg -55 to + 150 
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
Rt h JC
Rt h JC
Rt h JA
MAX.
0.45
2.0
40
UNIT
/W
/W
/W
2014. 11. 06
Revision No : 0
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