KGF25N135NDH Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – SEMICONDUCTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy
efficiency and high avalanche ruggedness for soft switching application
such as IH(induction heating), microwave oven, etc.
FEATURES
hHigh speed switching
hHigh ruggedness, temperature stable behavior
hSoft current turn-off waveforms
hExtremely enhanced avalanche capability
KGF25N135NDH
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
V_CES
1350
V
V_GES
‚20
V
@Tc=25
I_C
@Tc=100
50
A
25
A
Pulsed Collector Current
I_CM*
75
A
Diode Continuous Forward Current @Tc=100
I_F
25
A
Diode Maximum Forward Current
I_FM
75
A
Maximum Power Dissipation
@Tc=25
P_D
@Tc=100
250
W
100
W
Maximum Junction Temperature
T_j
150

Storage Temperature Range
T_stg -55 to + 150 _
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R_{t h JC}
R_{t h JC}
R_{t h JA}
MAX.
0.5
2.0
40
UNIT
/W
/W
/W
2014. 8. 26
Revision No : 1
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