KGF25N120KDA Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – High speed switching

SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy
efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
hHigh speed switching
hHigh ruggedness, temperature stable behavior
hShort Circuit Withstand Times ℜ10us
hExtremely enhanced avalanche capability
KGF25N120KDA
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
V_CES
1200
V
V_GES
‚20
V
@Tc=25
I_C
@Tc=100
50
A
25
A
Pulsed Collector Current
Diode Continuous Forward Current @Tc=100
Diode Maximum Forward Current
Maximum Power Dissipation
@Tc=25
@Tc=100
Maximum Junction Temperature
Storage Temperature Range
I_CM*
75
A
I_F
25
A
I_FM
75
A
227
W
P_D
91
W
T_j
150

T_stg -55 to + 150 _
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R_{t h JC}
R_{t h JC}
R_{t h JA}
MAX.
0.55
1.7
40
UNIT
/W
/W
/W
E
C
G
2013. 9. 30
Revision No : 0
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