KGF15N60FDA Datasheet, PDF (1/8 Pages) KEC(Korea Electronics) – High speed switching

SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
FEATURES
hHigh speed switching
hHigh ruggedness, temperature stable behavior
hShort Circuit Withstand Times ℜ5us(@T_C=100)
hExtremely enhanced avalanche capability
KGF15N60FDA
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
V_CES
600
V
V_GES
‚20
V
@Tc=25
I_C
@Tc=100
15
A
7.5
A
Pulsed Collector Current
I_CM*
30
A
Diode Continuous Forward Current @Tc=25
I_F
15
A
Diode Maximum Forward Current
I_FM*
45
A
@Tc=25
Maximum Power Dissipation
P_D
@Tc=100
50
W
20
W
*RMeapxeitmitiuvme rJautinncgti:oPnuTlseemwpeidrathtulriemited by max. junction temTp_jerature 150

Storage Temperature Range
T_stg -55 to + 150 _
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R_{t h JC}
R_{t h JCD}
R_{t h JA}
MAX.
2.5
3.6
62.5
UNIT
/W
/W
/W
2013. 8. 23
Revision No : 0
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