KF9N50P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
hV_DSS(Min.)= 500V, I_D= 9A
hR_DS(ON)=0.75 ʃ(Max) @V_GS =10V
hQg(typ.) =19nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current
@T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
RATING
KF9N50P KF9N50F
500
‚30
9
9*
5.5
5.5*
24
24*
200
4
4.5
125
41
1.0
0.33
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
150
-55q150
Thermal Resistance, Junction-to-Case R_thJC
1.0
3.05
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
PIN CONNECTION
D
KF9N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF9N50P
A
O
C
F
E
G
B
Q
I
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M
1.27 +_ 0.1
N
2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KF9N50F
A
C
E
L
M
D
NN
123
R
H
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E
3.18 +_ 0.1
F
3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
* Single Gauge Lead Frame
TO-220IS (1)
G
S
2013. 5. 03
Revision No : 1
1/7