KF9N40D_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Convertor and
switching mode power supplies.
FEATURES
hV_DSS(Min.)= 400V, I_D= 6.5A
hDrain-Source ON Resistance : R_DS(ON)=0.83ʃ(max) @V_GS =10V
hQg(typ.) =13 nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
V_DSS
Gate-Source Voltage
V_GSS
@T_C=25
I_D
Drain Current
@T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
T_C=25
Derate above25
I_DP
E_AS
E_AR
dv/dt
P_D
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
RATING
400
‚30
6.5
4.1
18*
140
3.9
4.5
78
0.63
150
-55q150
Thermal Resistance, Junction-to-Case R_thJC
1.6
Thermal Resistance, Junction-to-
Ambient
R_thJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
KF9N40D
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
C
D
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F
2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J
1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O
0.1 MAX
1
2
3
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
D
G
S
2013. 8. 30
Revision No : 0
1/6