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KF8N60P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
KF8N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
hVDSS=600V, ID=8A
hDrain-Source ON Resistance :
RDS(ON)(Max)=1.05Ê @VGS=10V
hQg(typ.)= 22nC
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
RATING
SYMBOL
KF8N60P KF8N60F
Drain-Source Voltage
Gate-Source Voltage
@TC=25Â
Drain Current @TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above 25Â
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
600
Â30
8
8*
5
5*
18
18*
230
14.7
4.5
160
44.6
1.28
0.36
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
150
-55q150
Thermal Resistance, Junction-to-Case RthJC
0.78
2.8
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
Â/W
KF8N60P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KF8N60F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
* Single Gauge Lead Frame
PIN CONNECTION
D
TO-220IS (1)
G
S
2013. 5. 03
Revision No : 1
1/7
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