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KF7N68F_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
KF7N68F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
hVDSS=680V, ID=7A
hDrain-Source ON Resistance :
RDS(ON)(Max)=1.25Ê @VGS=10V
hQg(typ.)= 24nC
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25Â
@TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above 25Â
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
680
Â30
7*
4.2*
18*
212
1.6
4.5
44.6
0.36
150
-55q150
Thermal Resistance, Junction-to-Case RthJC
2.8
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
Â/W
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
PIN CONNECTION
D
G
S
2013. 5. 08
Revision No : 1
1/6
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