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KF6N60P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
hVDSS(Min.)= 600V, ID= 6A
hRDS(ON)=1.4 Ê(Max) @VGS =10V
hQg(typ.) =16nC
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@TC=25Â
Drain Current
@TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above25Â
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
RATING
KF6N60P KF6N60F
600
Â30
6
6*
3.8
3.8*
15
15*
180
4
4.5
100
41.7
0.8
0.33
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Characteristics
150
-55q150
Thermal Resistance, Junction-to-Case RthJC
1.25
3.0
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
Â/W
PIN CONNECTION
KF6N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF6N60P
KF6N60F
2011. 6. 30
Revision No : 0
1/2
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