KF5N65P_15 Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
hV_DSS= 650V, I_D= 5A
hDrain-Source ON Resistance : R_DS(ON)=1.75ʃ(Max) @V_GS = 10V
hQg(typ) = 14.5nC
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF5N65P KF5N65F
Drain-Source Voltage
V_DSS
650
V
Gate-Source Voltage
V_GSS
‚30
V
Drain Current
@T_C=25
@T_C=100
5
5*
I_D
3.0
3.0*
A
Pulsed (Note1)
I_DP
15
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
E_AS
E_AR
dv/dt
150
mJ
3.8
mJ
4.5
V/ns
Drain Power
Dissipation
Tc=25
P_D
Derate above 25
100
41.7
W
0.8
0.33 W/
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
150

-55q150

Thermal Resistance, Junction-to-Case R_thJC
1.25
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
3.0 /W
62.5 /W
PIN CONNECTION
D
KF5N65P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
KF5N65P
O
C
F
G
B
Q
P
L
J
H
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8 +_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF5N65F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
* Single Gauge Lead Frame
TO-220IS (1)
G
S
2014. 12. 16
Revision No : 1
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