KF5N50P Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KF5N50P/F/PZ/FZ
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
V_DSS= 500V, I_D= 5.0A
Drain-Source ON Resistance : R_DS(ON)=1.4
Qg(typ) = 12nC
@V_GS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATING
KF5N50P KF5N50F
KF5N50PZ KF5N50FZ
V_DSS
500
V_GSS
30
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
5.0
5.0*
2.9
2.9*
13
13*
270
8.6
4.5
83
41.5
0.66
0.33
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case R_thJC
1.5
3.0
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
(KF5N50P, KF5N50F)
D
(KF5N50PZ, KF5N50FZ)
D
KF5N50P, KF5N50PZ
A
E
I
O
C
F
G
B
Q
K
P
M
L
D
NN
J
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF5N50F, KF5N50FZ
A
S
E
L
L
M
D
D
NN
123
C
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_0.2
R
F
3.0 +_ 0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J
13.6 +_0.5
K
3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
H
N 2.54 +_0.1
P
6.8 +_0.1
Q
4.5+_ 0.2
R
2.6+_ 0.2
S
0.5 Typ
1. GATE
2. DRAIN
3. SOURCE
TO-220IS
G
S
G
S
2008. 11. 19
Revision No : 0
1/7