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KF5N50FZA_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
hVDSS= 500V, ID= 5.0A
hDrain-Source ON Resistance : RDS(ON)=1.4Ê @VGS = 10V
hQg(typ) = 12nC
htrr(typ) = 150ns (KF5N50FSA)
htrr(typ) = 300ns (KF5N50FZA)
MAXIMUM RATING (Tc=25Â)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25Â
Drain Current @TC=100Â
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25Â
Derate above 25Â
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
500
Â30
5.0*
2.9*
13*
270
8.6
20
37.9
0.30
150
-55q150
Thermal Resistance, Junction-to-Case RthJC
3.3
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
UNIT
V
V
A
mJ
mJ
V/ns
W
W/Â
Â
Â
Â/W
Â/W
KF5N50FZA/FSA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
2010. 8. 25
Revision No : 0
1/6
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