KF5N50FZA Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
hV_DSS= 500V, I_D= 5.0A
hDrain-Source ON Resistance : R_DS(ON)=1.4ʃ @V_GS = 10V
hQg(typ) = 12nC
ht_rr(typ) = 150ns (KF5N50FSA)
ht_rr(typ) = 300ns (KF5N50FZA)
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
T_j
T_stg
500
‚30
5.0*
2.9*
13*
270
8.6
20
37.9
0.30
150
-55q150
Thermal Resistance, Junction-to-Case R_thJC
3.3
Thermal Resistance, Junction-to-
Ambient
R_thJA
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
KF5N50FZA/FSA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
2010. 8. 25
Revision No : 0
1/6