KF5N50DZ Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
hV_DSS= 500V, I_D= 4.3A
hDrain-Source ON Resistance : R_DS(ON)=1.4ʃ(Max) @V_GS = 10V
hQg(typ) = 12nC
KF5N50DZ/IZ
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF5N50DZ
A
C
D
B
H
J
E
G
FF
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
MAXIMUM RATING (Tc=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
@T_C=25
Drain Current @T_C=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
V_DSS
V_GSS
I_D
I_DP
E_AS
E_AR
dv/dt
P_D
Maximum Junction Temperature
T_j
Storage Temperature Range
T_stg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R_thJC
R_thJA
PIN CONNECTION
(KF5N50DZ/IZ)
D
RATING
500
‚30
4.3
2.7
13
270
8.6
20
59.5
0.48
150
-55q150
2.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/


/W
/W
1
2
3
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF5N50IZ
A
H
C
J
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
6.6 +_ 0.2
B
6.1 +_ 0.2
C
5.34 +_0.3
D
0.7 +_ 0.2
E
9.3 +_0.3
F
2.3+_ 0.2
G
0.76 +_ 0.1
H
2.3 +_ 0.1
J
0.5+_ 0.1
K
1.8 +_ 0.2
L
0.5 +_ 0.1
M
1.0 +_ 0.1
N 0.96 MAX
P
1.02 +_ 0.3
IPAK(1)
G
S
2011. 5. 23
Revision No : 0
1/6